PHYWE Study of the Hall effect in n- and p-type germanium conductor (teslameter)

Principle. The resistivity and Hall voltage of two rectangular germanium samples (n- and p-) are measured as functions of temperature and magnetic field. The band gap width, specific conductivity, charge carrier type and mobility are determined from the measurements. Tasks. The Hall voltage is measured at room temperature and a constant magnetic field as a function of the control current and plotted (measurement without defect voltage compensation). The voltage across the sample is measured at room temperature and a constant control current as a function of the magnetic induction B. The voltage across the sample is measured at a constant control current as a function of temperature. The distance between the band gaps of germanium is calculated from the measurement results. The Hall voltage UH is measured as a function of the magnetic induction B at room temperature. The sign of the charge carriers and the Hall constant RH together with the Hall mobility mH and the carrier concentration p are calculated from the measurement results. The Hall voltage UH is measured as a function of temperature at a constant magnetic induction B and the values are plotted. Learning objectives: semiconductors, band theory, forbidden band, intrinsic conductivity, impurity conductivity, valence band, conduction band, Lorentz force, magnetic resistance, mobility, conductivity, distance between bands, Hall coefficient.